My research work is mainly focused on the emerging semiconductor devices and their applications. I have proposed and fabricated several novel ultralow power devices with the new principle which shows the lowest subthreshold swing in silicon-based tunnel transistors ever obtained on record, and the best comprehensive performance among current silicon-based tunnel device designs. Moreover, in collaboration with China’s leading CMOS foundry, SMIC, I have developed the first foundry baseline platform for complementary tunnel devices, significantly pushing forward the deployment of emerging ultra-low-power device research into manufacturable technologies in industry. I have authored/co-authored more than 60 papers at the most prestigious intentional conferences and journals in electron device field, and have got more than 50 authorized patents. As the Principal Investigator, I have got several strong competitive grants from Chinese government, including National Key Research and Development Program of China in 2019, Emergency Management Fund of NSFC in 2019 and Excellent Young Scientists Fund of NSFC in 2018. I am also the recipient of 2020 Qiu Shi Outstanding Young Scholar Award, 2019 IEEE Electron Devices Society Early Career Award, 2017 Top 4 Young Talents of the L’Oréal-UNESCO For Women in Science Award in China, etc.